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Journal Paper
Dual-Channel Indium Nitride Tunnel Field Effect Transistor: A Comprehensive Study on Design, Sensitivity, and Electrical Performance
Authors:
Zahra Ahangari
Year 1402
Publish place:
Journal of Modeling & Simulation in Electrical & Electronics Engineering Issue 4، Vol 2
Pages:
9
| Language: English
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Journal Paper
Enhancing High-Performance Computing: A Comprehensive Study on Dual-Doped Source/Drain Reconfigurable Field Effect Transistor
Authors:
Z. Ahangari
Year 1403
Publish place:
Journal of Electrical and Computer Engineering Innovations Issue 2، Vol 12
Pages:
10
| Language: English
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Journal Paper
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
Authors:
Mahdi Mohammadkhani Ghiasvand
،
Zahra Ahangari
،
Hamed Nematian
Year 1401
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 7
Pages:
18
| Language: English
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Journal Paper
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Authors:
Zahra Ahangari
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
12
| Language: English
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Conference Paper
Workfunction Engineering of Dual Metal Double Gate TunnelField Effect Transistor for Power Relay Application
Authors:
Saeid Marjani
،
Hamid Mousavi
Year 1401
Publish place:
Eighth international Conference on Knowledge and Technology of Mechanical, Electrical Engineering and Computer Of Iran
Pages:
6
| Language: English
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Journal Paper
Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
Authors:
Zahra Ahangari
Year 1398
Publish place:
International Journal of Nano Dimension Issue 4، Vol 10
Pages:
9
| Language: English
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Journal Paper
Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics
Authors:
Amirreza Bozorgi Golafzani
،
Seyed Ali Sedigh Ziabari
Year 1399
Publish place:
International Journal of Nano Dimension Issue 1، Vol 11
Pages:
6
| Language: English
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Journal Paper
طراحی و تحلیل یک ترانزیستور اثرمیدانی تونلی بدون پیوند دو گیتی با ساختار گیت چند ماده ای
Authors:
نگار بشیری
،
رضا حسینی
Year 1400
Publish place:
Journal of Iranian Association of Electrical and Electronics Engineers Issue 4، Vol 18
Pages:
7
| Language: Persian
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